PURPOSE: To obtain a single-crystal Si film by a method wherein an amorphous Si film in which an uneven face has been formed on an insulating film is deposited in order to restrain a very small crystal Si particle from being precipitated.
CONSTITUTION: A thermal oxide film (SiO2)2 is formed on a single-crystal Si substrate 1; after that, a window part 2a is formed so as to use one part of a single-crystal Si face as a seed region. Then, a stripe-shaped resist 3 is patterned on the thermal oxide film 2; after that, stripe-shaped groove parts 2b are formed. Then, an amorphous Si film 4 is deposited and formed on the thermal oxide film 2 by an ultrahigh-vacuum EB vapor deposition method or a low-pressure CVD method. Then, an annealing operation is executed at a low temperature (500 to 600°C); a single-crystal Si film 5 is formed. During this process, since a very small crystal particle has been restrained from being precipitated before the annealing operation, a solid epitaxial growth part using the very small crystal Si particle as a seed is reduced and a good-quality single- crystal film 5 having a few grain boundaries can be obtained.
UEDA ATSUSHI
SEKI YASUKAZU
