Title:
METHOD OF FERMING LOW RESISTANCE CONNECTION AT LOW RESISTANCE AREA OF VLSI DEVICE
Document Type and Number:
Japanese Patent JPH02194524
Kind Code:
A
Abstract:
PURPOSE: To form a low-resistance connection in the resistance area of a VLSI device by preventing the occurrence of electrical disconnection by forming a titanium layer on the entire surface of a polycrystalline silicon layer and on the resistance area exposed in an opening and forming a titanium silicide by causing reaction between the titanium and the polycrystalline silicon layer. CONSTITUTION: An insulating layer 3 is formed on the surface of a silicon substrate 1 on which a resistance area 2 which is highly doped with an N- or P-type impurity is formed and a polycrystalline silicon layer 4 is deposited on the layer 3. After the silicon layer 4, an opening 5 is formed through the layers 4 and 3 so as to expose the selected part 6' of the resistance area 2 and a titanium layer 6 is formed by depositing titanium by sputtering except the vertical wall surfaces 8 of the insulating layer 3. Then the titanium layer is changed to a titanium silicide layer 7 by causing a reaction between the titanium in the layer 6 and the silicon in the underlying layer 4 by heating the layers 6 and 4 in a nitrogen atmosphere. Finally, a low-resistance connection is formed by depositing a tungsten silicide layer 9 on the vertical wall surfaces 8 of the insulating layer 3 and the titanium silicide layer 7.
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Inventors:
DEEJIE JIN
CHIYANNHIYUN KIMU
CHIYURUUJIN RII
CHIYANNHIYUN KIMU
CHIYURUUJIN RII
Application Number:
JP2274889A
Publication Date:
August 01, 1990
Filing Date:
February 02, 1989
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/28; H01L21/285; H01L27/04; H01L21/3205; H01L21/768; H01L21/822; H01L23/532; (IPC1-7): H01L21/28; H01L27/04
Domestic Patent References:
| JPS61294816A | 1986-12-25 | |||
| JPS63120419A | 1988-05-24 | |||
| JPS62213277A | 1987-09-19 | |||
| JPS63116A | 1988-01-05 | |||
| JPS6158866A | 1986-03-26 | |||
| JPS60143648A | 1985-07-29 | |||
| JPS60193380A | 1985-10-01 | |||
| JPS60119750A | 1985-06-27 |
Attorney, Agent or Firm:
Takeshi Takatsuki
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