PURPOSE: To inhibit a resistance film from being peeled during a process of forming an element and after the element is formed by a method wherein the resistance film is formed not on the surface of a layer insulating film but in the interlayer insulating film in such a way that it is fitted in the insulating film.
CONSTITUTION: A layer insulator film 11 is formed on a silicon substrate 10 and a pattern formation resist layer 12 to decide a resistance film pattern is formed on the film 11 in a thickness of about 15000. Then, the substrate 10 provided with the film 11 and the layer 12 is put in a reactive ion etching device and the film 11 is dug down to a depth of 400. Then, the sample is moved to a deposition device and a Pd film 13 is formed in a thickness of 400. Lastly, the layer 12 is lifted-off, whereby the resistance film 13 having a desired pattern is obtained in a state that it is buried in the film 11. Moreover, a second layer insulator film 14 is formed thereon in the same thickness as that of the film 11 and a contact hole and a superconducting film are formed.
HATANAKA HIROSAKU
KANEDA TOSHINOBU
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