PURPOSE: To form a thin film having a uniform thickness at a good yield on the surface of a substrate by allowing an atomized raw material soln. to rise gently from the lower part of a substrate which is obliquely installed with the surface faced downward and is kept heated along the surface thereof.
CONSTITUTION: The substrate 15 is obliquely installed with the surface faced downward by a substrate holder 16 in a reaction chamber 19 having a discharge port 11 and is heated to about 400W500°C by a heater 17 from the rear side. On the other hand, the raw material soln. such as a chloride soln. of Sn or In is atomized by ultrasonic oscillation in an atomizing chamber 13 provided below the chamber 19 and is blown from below to above via a hozzle 14 to the surface of the substrate 15 by the blast from an air feeder 12 induced by a fan 18. The atomized raw material soln. is formed into the laminar flow rising along the slope on the substrate 15 surface and is gently moved from the lower part. The raw material soln. is thereby heated and dehydrated near the substrate 15 surface and is brought into reaction with the oxygen in the air, by which the thin oxide film of Sn, In, etc. is uniformly formed on the substrate 15.
IIDA HIDEYO
FUJIMAKI YUKIKO
| JPS5440073A | 1979-03-28 | |||
| JPS6052571A | 1985-03-25 |