PURPOSE: To manufacture a mechanically firm transistor having excellent high- frequency characteristics easily by forming a first electrode connected from a first conductive layer to a first semiconductor region and extended onto first and second inclined inner side faces.

CONSTITUTION: Even when a semiconductor region 4. is shaped so that length in the direction that semiconductor regions 5, 6 are tied is shortened sufficiently, an electrode 7 on the semiconductor region 4 is also extended onto inclined inner side faces 11b, 12b on insulating layers 11', 12'. Consequently, a transistor can be given large volume easily and can be formed mechanically firmly. Since electrodes 8, 9 are shaped in a self-alignment manner, distances among each of the electrodes 8, 9 and the electrode 7 are shortened, and the electrodes 8, 9 can be formed easily. Accordingly, the mechanically strong transistor having excellent high-frequency characteristics can be manufactured readily.