To provide a manufacturing apparatus for obtaining high purity polysilicon at high speed.

The manufacturing apparatus 1 for polysilicon is provided with: a reaction vessel body 10 for forming a supercritical fluid state of a silicon halide compound introduced into the inside; electrodes 11, 12 which are provided inside the reaction vessel body 10 and carry out plasma discharge; a deposition member 30 which is provided inside the reaction vessel body 10 and allows silicon degraded by the plasma discharge to be deposited on a surface where the temperature is kept higher than the melting point of silicon and allows the deposited silicon to be melted; and a recovery member 32 for recovering the silicon melted on the deposition member 30.