Title:
MANUFACTURING III NITRIDE SEMICONDUCTOR LASER DIODE
Document Type and Number:
Japanese Patent JP3905629
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the flatness of a resonator end face by forming the resonator end face of a laser through converged ion beam etching.
SOLUTION: A resonator end face is etched with a converged ion beam in 3 stages. In the first stage, the beam current is 4.722 nA, a process range has a width D=32 μm, width W1=5 μm and process depth down to a substrate, and the tilt angle is 3.5°. In the second stage, the beam current is 646 pA, a process range has a length of 32 μm, width W2=1.26 μm and process depth down to the substrate, and tilt angle is 1.5°. In the third stage, the beam current is 130 pA, a process range has a length of 32 μm, width W3=1.2 μm and process depth down to the substrate, and the tilt angle is 1.5°. Thus the etching is done under changed conditions in the order of regions P1, P2, P3. Through such etchings, the flatness of the resonator end face can be improved.
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Inventors:
Kuki Kato
Isamu Akasaki
Hiroshi Amano
Isamu Akasaki
Hiroshi Amano
Application Number:
JP8018598A
Publication Date:
April 18, 2007
Filing Date:
March 11, 1998
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
Isamu Akasaki
Hiroshi Amano
Isamu Akasaki
Hiroshi Amano
International Classes:
H01S5/00; H01S5/10; H01S5/323; H01S5/343; (IPC1-7): H01S3/18
Domestic Patent References:
| JP10041584A | ||||
| JP9223844A | ||||
| JP7249830A | ||||
| JP10051064A | ||||
| JP61123191A | ||||
| JP7007229A | ||||
| JP8213694A | ||||
| JP10242573A |
Attorney, Agent or Firm:
Osamu Fujitani
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