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Title:
MANUFACTURING METHOD FOR OXIDE SEMICONDUCTOR LAYER, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2014039047
Kind Code:
A
Abstract:

To manufacture an oxide semiconductor suitable for the use in a semiconductor device, and provide a manufacturing method for a semiconductor device and a semiconductor device using the oxide semiconductor.

In a manufacturing method for forming an oxide semiconductor layer by a sputtering method with the use of an oxide semiconductor target including In, Ga, and Zn, the oxide semiconductor layer contains a smaller amount of Ga than the Ga in the target and the oxide semiconductor layer contains a smaller amount of Zn than the Zn in the target. In the oxide semiconductor layer including In, Ga, and Zn, the content of Zn is less than the content of the Ga, the content of Zn is less than the content of In, and the amorphous structure is 90 vol% or less.


Inventors:
AKIMOTO KENGO
SAKATA JUNICHIRO
HIROHASHI TAKUYA
TAKAHASHI MASAHIRO
KISHIDA HIDEYUKI
MIYANAGA SHOJI
Application Number:
JP2013192626A
Publication Date:
February 27, 2014
Filing Date:
September 18, 2013
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L21/336; H01L21/363; H01L29/786
Domestic Patent References:
JP2007250984A2007-09-27
JP2007173489A2007-07-05
JP2008042088A2008-02-21
JP2008276212A2008-11-13
JP2008277326A2008-11-13
JP2007311404A2007-11-29
JP2008243928A2008-10-09



 
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