MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2001110827

Kind Code:

A

Abstract:

To provide a method for manufacturing a semiconductor device in which the thickness of a sealing layer is controlled by a simple method, and a semiconductor element mounted in a device hole is resin-sealed.

A semiconductor device is constituted of resin-sealing a semiconductor element 20 mounted in a device hole 18 formed in a substrate 10, and electrically connected with a lead 14 formed at one face side of the substrate 10 and extended in the device hole 18. After the semiconductor element 20 housed in the device hole 18 is electrically connected with the lead 14, a supporting film 26, on whose one face side a resin layer 24 made of thermosettable resin to be fluidized by heat treatment is formed is placed on the substrate face so that fluidized resin formed of the thermosettable resin fluidized by the above heat treatment may flow in the device hole 18. Then, the heat treatment of the resin layer 24 of the supporting film 26 is carried out so that the semiconductor element 20 housed in the device hole 18 is resin- sealed by fluidizing the thermosettable resin forming the resin layer 24.

Inventors:

TAMATATE YUKA
HARAYAMA YOICHI
SATO SEIJI
HORIUCHI MICHIO

Application Number:

JP28229199A

Publication Date:

April 20, 2001

Filing Date:

October 04, 1999

Export Citation:

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Assignee:

SHINKO ELECTRIC IND CO

International Classes:

H01L23/12; H01L21/56; (IPC1-7): H01L21/56

Attorney, Agent or Firm:

Takao Watanuki (1 outside)

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