MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2007335557

Kind Code:

A

Abstract:

To measure etching depth during etching or film thickness during film formation.

A first interference wave is detected according to respective reflected waves 17c and 17d from a first surface of a semiconductor wafer 1 and a reference mirror 13. Then, the first surface of the semiconductor wafer 1 is etched to deform the first surface into a second surface. Then, a second interference wave is detected according to respective reflected waves 17c and 17d from the second surface of the semiconductor wafer 1 and the reference mirror 13. Then, the phase difference between the first interference wave and the second interference wave is converted to a voltage value, and this voltage value is applied to a piezoelectric element 15, to which the reference mirror 13 being fixed, to displace the piezoelectric element 15 and move the reference mirror 13.

Inventors:

CHO SEISAI

Application Number:

JP2006164342A

Publication Date:

December 27, 2007

Filing Date:

June 14, 2006

Export Citation:

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Assignee:

RENESAS TECH CORP

International Classes:

H01L21/3065; C23C16/52; G01B9/02; G01B11/06; G01B11/22; H01L21/205; H01L21/66; H01L21/76

Attorney, Agent or Firm:

Yamato Tsutsui

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