Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021057600
Kind Code:
A
Abstract:
To improve the reliability of a transistor including an oxide semiconductor by suppressing the variation in electric characteristics.SOLUTION: A semiconductor device includes a transistor. The transistor includes a first oxide semiconductor film on a first insulating film, a gate insulating film on the first oxide semiconductor film, a second oxide semiconductor film on the gate insulating film, and a second insulating film on the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region overlapping with the second oxide semiconductor film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The channel region includes a first layer and a second layer that is in contact with an upper surface of the first layer and covers a side surface of the first layer in a channel width direction. The second oxide semiconductor film has higher carrier density than the first oxide semiconductor film.SELECTED DRAWING: Figure 1
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Inventors:
HIZUKA JUNICHI
KAMINAGA MASAMI
SHIMA YUKINORI
KAMINAGA MASAMI
SHIMA YUKINORI
Application Number:
JP2020199399A
Publication Date:
April 08, 2021
Filing Date:
December 01, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; G09F9/30; H01L21/28; H01L27/146; H01L27/32; H01L29/423; H01L29/49; H01L29/786; H01L51/50; H05B33/14
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