Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5244885
Kind Code:
B2
Abstract:
A semiconductor device using a TFT structure with high reliability is realized. As an insulating film used for the TFT, for example, a gate insulating film, a protecting film, an under film, an interlayer insulating film, or the like, a silicon nitride oxide film (SiNXBYOZ) containing boron is formed by a sputtering method. As a result, the internal stress of this film becomes -5x1010 dyn/cm2 to 5x1010 dyn/cm2, preferably -1010 dyn/cm2 to 1010 dyn/cm2, and the film has high thermal conductivity, so that it typically becomes possible to prevent deterioration due to heat generated at the time of an on operation of the TFT.
Inventors:
Shunpei Yamazaki
Application Number:
JP2010236657A
Publication Date:
July 24, 2013
Filing Date:
October 21, 2010
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; C23C14/00; C23C14/06; H01L21/283; H01L21/314; H01L21/316; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/49
Domestic Patent References:
| JP8254713A | ||||
| JP9139506A | ||||
| JP10261801A |