Title:
Manufacturing method of semiconductor devices
Document Type and Number:
Japanese Patent JP6361709
Kind Code:
B2
Abstract:
Provided is a method for manufacturing a semiconductor device through which improvement of production efficiency can be achieved. In the method of manufacturing the semiconductor device (1), a sealing material (7) is attached to seal a semiconductor element (3), a release film (F) is provided in a mold facing the semiconductor element (3), and the sealing material (7) is cured by an upper mold (22) and a lower mold (24). A metal layer (9) that shields electromagnetic waves is previously provided on a side of the release film (F) coming in contact with the sealing material (7). In the curing of the sealing material (7), the metal layer (9) is transferred to the sealing material (7).
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Inventors:
Takashi Kawamori
Naoya Suzuki
Naoya Suzuki
Application Number:
JP2016163992A
Publication Date:
July 25, 2018
Filing Date:
August 24, 2016
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
H01L21/56; B29C43/18; H01L23/00
Domestic Patent References:
| JP2005268565A | ||||
| JP2007287937A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshinori Shimizu
Hiroyuki Hirano
Yoshinori Shimizu
Hiroyuki Hirano