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Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS51144580
Kind Code:
A
Abstract:
PURPOSE:Forming a pattern edge steep, provided in the oxidized film used for a mask of ion radiation.

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Inventors:
YUMOTO OSAMU
HAYASAKA AKIO
Application Number:
JP6860175A
Publication Date:
December 11, 1976
Filing Date:
June 09, 1975
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01L21/3205; H01L21/28; H01L21/31; H01L21/331; H01L29/08; H01L29/73; (IPC1-7): H01L21/28; H01L21/31; H01L21/88; H01L29/08



 
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