Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5694738
Kind Code:
A
Abstract:
PURPOSE:To improve an accuracy of a resist pattern and an accuracy of a metallic wiring by a method wherein a reflection protective film such as chrome oxide, etc. is coated on a metallic layer to protect an reflection of an exposure light. CONSTITUTION:An aliminium layer 3 is formed on a silicon substrate 1 through an SiO2 layer 2. A reflection protective film 10 composed of chrome oxide is arranged on the surface of the aluminium layer 3 and covering the reflection protective film 10, a photoresist layer 4 is formed. Because of the existence of the reflection protective film 10, an exposure light irradiated through a photomask 6 does not generate a reflection and turbulent reflection after it passes through the photoresist layer 4. Since an obscurity of an exposure pattern due to the reflection. turbulent reflection of the exposure light is not generated, the aluminium layer 3 can be etched with an extremely high accuracy.
Inventors:
KAWAMURA NOBUKI
TOKUNAGA HIROSHI
TOKUNAGA HIROSHI
Application Number:
JP17105979A
Publication Date:
July 31, 1981
Filing Date:
December 28, 1979
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/3213; G03F7/09; H01L21/027; H01L21/28; (IPC1-7): H01L21/28; H01L21/30; H01L21/88
Domestic Patent References:
| JPS5346700A | 1978-04-26 | |||
| JPS5158072A | 1976-05-21 | |||
| JPS498182A | 1974-01-24 |