Title:
半導体装置、セラミックス回路基板及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5664625
Kind Code:
B2
Abstract:
A semiconductor device (1) comprises a circuit layer (12) composed of a conductive material, and a semiconductor element (3) mounted on the circuit layer (12), wherein an underlayer (31) having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer (12), a bonding layer (38) composed of a sintered body of a bonding material including an organic substance and at least one or both of metal particles and metal oxide particles is formed on the underlayer (31), and the circuit layer (12) and the semiconductor element (3) are bonded together via the underlayer (31) and the bonding layer (38).
Inventors:
西元 修司
長友 義幸
長瀬 敏之
長友 義幸
長瀬 敏之
Application Number:
JP2012224257A
Publication Date:
February 04, 2015
Filing Date:
October 09, 2012
Export Citation:
Assignee:
三菱マテリアル株式会社
International Classes:
H01L25/07; H01L21/52; H01L25/18
Attorney, Agent or Firm:
Masatake Shiga
Norio Takahashi
Yuji Masui
Fumihiro Hosokawa
Norio Takahashi
Yuji Masui
Fumihiro Hosokawa