Title:
半導体装置の製造方法および半導体装置
Document Type and Number:
Japanese Patent JP4699692
Kind Code:
B2
Abstract:
A production method for a semiconductor device, including the steps of: forming a semiconductor layer of the first conductivity on the semiconductor substrate; forming a trench in the semiconductor layer, the trench penetrating through the semiconductor layer to reach the semiconductor substrate; filling a filling material in a predetermined bottom portion of the trench, so that a filling material portion is provided in the bottom portion of the trench up to a predetermined upper surface position which is shallower than an interface between the semiconductor substrate and the semiconductor layer; and, after the filling step, introducing an impurity of the second conductivity into a portion of the semiconductor layer exposed to an interior side wall of the trench.
Inventors:
Takaishi Masa
Application Number:
JP2003435266A
Publication Date:
June 15, 2011
Filing Date:
December 26, 2003
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L29/41; H01L29/78; H01L21/336; H01L29/06; H01L29/40; H01L21/265; H01L29/417
Domestic Patent References:
| JP2003101022A | ||||
| JP2000277733A | ||||
| JP5218415A | ||||
| JP60244043A | ||||
| JP4273462A |
Foreign References:
| WO2000005767A1 |
Attorney, Agent or Firm:
Inaoka cultivation
Mio Kawasaki
Yuichi Minagawa
Kawazu Koichi
Mio Kawasaki
Yuichi Minagawa
Kawazu Koichi