Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP4213250
Kind Code:
B2
More Like This:
| JPH09129751 | SEMICONDUCTOR STRUCTURE FOR TRANSISTOR AND CIRCUIT |
| JPS55154744 | SEMICONDUCTOR DEVICE |
| JP5825012 | Semiconductor device |
Inventors:
Masaki Hotta
Yoshio Ozawa
Yoshio Ozawa
Application Number:
JP8687298A
Publication Date:
January 21, 2009
Filing Date:
March 31, 1998
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/78; H01L21/316
Domestic Patent References:
| JP8507175A | ||||
| JP10012609A | ||||
| JP9213820A | ||||
| JP10223628A | ||||
| JP10303424A | ||||
| JP11087712A | ||||
| JP10200115A |
Foreign References:
| WO1997026676A1 |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai