Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE TREATMENT APPARATUS
Document Type and Number:
Japanese Patent JP2022065643
Kind Code:
A
Abstract:
To provide a method of manufacturing a semiconductor device, and a substrate treatment apparatus, which are capable of monitoring and adjusting the plasma emission intensity and the like in real time.SOLUTION: A method includes, in treatment of a substrate using plasma, acquiring an RF waveform from a reactor through an Ether CAT in real time, the RF waveform being a waveform relating to an electric power to be applied to an RF plate, and adjusting, by using the RF waveform, the electric power to be applied to the RF plate.SELECTED DRAWING: Figure 1
Inventors:
OMORI TAKU
Application Number:
JP2021167317A
Publication Date:
April 27, 2022
Filing Date:
October 12, 2021
Export Citation:
Assignee:
ASM IP HOLDING BV
International Classes:
H01L21/31
Attorney, Agent or Firm:
Atsushi Kuwano