Title:
半導体物理量センサ装置の製造方法および半導体物理量センサ装置の試験方法
Document Type and Number:
Japanese Patent JP6922244
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor physical quantity sensor device which can suppress changes of the physical quantity output characteristics from an initial state, and a method for testing the semiconductor physical quantity sensor device.SOLUTION: The sensor unit 10 of the semiconductor physical quantity sensor device is tightly attached to the bottom surface of a resin case 1 with an adhesive layer 13 and is covered with a gel-like protective material layer 5. When the semiconductor physical quantity sensor device is to be manufactured with free oil, the gel-like protective material layer 5 and the adhesive layer 13 with a small difference in the concentration of free oil therebetween are used for assembly. After the assembly and before the output characteristics of a semiconductor pressure sensor device are adjusted, the semiconductor pressure sensor device is left as it is in an atmosphere of room temperatures or 130°C or higher, the free oil is diffused between the gel-like protective material layer 5 and the adhesive layer 13, and the difference in the concentration of free oil is made smaller between the gel-like protective material layer 5 and the adhesive layer 13.SELECTED DRAWING: Figure 8
More Like This:
| JPS63289430 | SENSOR |
| WO/2022/190913 | PRESSURE SENSOR AND SENSOR SYSTEM |
Inventors:
Hiroki Iketeru
Application Number:
JP2017027944A
Publication Date:
August 18, 2021
Filing Date:
February 17, 2017
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
G01L9/00
Domestic Patent References:
| JP11023396A | ||||
| JP2010055807A | ||||
| JP2001099737A | ||||
| JP2002221462A | ||||
| JP2001153746A | ||||
| JP2004045142A |
Foreign References:
| US20120306031 |
Attorney, Agent or Firm:
Akinori Sakai