To provide a manufacturing method of a semiconductor thin film, a thin film transistor and a solar cell which release a technique for forming a large grain size poly-Si film on a large area with a high throughput through a cryogenic temperature process, while retaining an inexpensive radiation source and realize the improvement of characteristics of a poly-Si TFT (thin film transistor) and a circuit as well as the reduction of varieties, and a photoelectric device as well as an electronic device at a low cost employing the manufacturing method.
The manufacturing method of the semiconductor thin film 302 comprises at least a process for forming a semiconductor layer 302 on a substrate, a process for opposing a semiconductor light emitting device to the substrate and applying heat treatment on the semiconductor layer by moving the same relative to the substrate while irradiating light generated from the light emitting device against the semiconductor layer, a process for forming at least a first insulating layer 303 and a light absorbing layer 304 on the semiconductor layer formed on the substrate, and a process for opposing the light emitting device to the substrate and applying heat treatment on the semiconductor layer by moving the light absorbing layer relative to the substrate while irradiating light generated from the light emitting device against the light absorbing layer.
Fujitsuna Hideyoshi
Osamu Suzawa