Title:
スパッタリングターゲット構造体の製造方法
Document Type and Number:
Japanese Patent JP5242169
Kind Code:
B2
Abstract:
To provide a sputtering target structure which has good machinability and thermal conductivity and has good wettability with soldering materials, which is inexpensive and can be used repeatedly for a long period of time, and which is free from problems of cracking and peeling of the sputtering target therein, a sputtering target structure is formed by bonding a sputtering target and a backing plate. The backing plate is formed of a material that has the difference in the linear expansion coefficient between it and the sputtering target material of at most 2×10-6/K, and a copper plate having a thickness of from 0.3 to 1.5 mm is disposed on at lest one face of the backing plate.
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Inventors:
Suzuki Nobuyuki
Terashi Akira
Tsutomu Kuniya
Terashi Akira
Tsutomu Kuniya
Application Number:
JP2007552009A
Publication Date:
July 24, 2013
Filing Date:
December 27, 2006
Export Citation:
Assignee:
AM Technology Co., Ltd.
Plansee SA
Plansee SA
International Classes:
C23C14/34; C22C1/10; C22C49/06; C22C49/14; C22C101/04; C22C101/10; C22C101/14; C22C101/18; C22C101/22
Domestic Patent References:
| JPH11200030A | 1999-07-27 | |||
| JPH11189870A | 1999-07-13 | |||
| JPH08246144A | 1996-09-24 |
Attorney, Agent or Firm:
Iwao Yamaguchi
Kiyoshi Matsuzaki
Kiyoshi Matsuzaki
Previous Patent: JPS5242168
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