Title:
薄膜コンデンサの製造方法
Document Type and Number:
Japanese Patent JP5445704
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film capacitor that includes a dielectric thin film containing a composite oxide of Ca and Zr, and can suppress a leakage current compared with a conventional one.SOLUTION: The method of manufacturing a thin film capacitor includes a lamination step for laminating one or more precursor layers on an electrode by performing temporary baking of a coating film formed from a solution of Ca and Zr on the electrode once or more times, and a normal baking step for forming a dielectric layer on the electrode by normally baking the one or more precursor layers laminated on the electrode at 850°C-1000°C. The content of Ti in the solution is set to 0 mole or more, the ratio of the number of moles Mof Ca to the sum of the number of moles Mof Zr and the number of moles Mof Ti (M/(M+M)) is set to 0.9-1.1, and the content of a sintering aid in the solution is set at 1000 ppm or less to the content of metal elements in the solution.
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Inventors:
Kiyoshi Uchida
Hitoshi Saida
Kenji Horino
Hitoshi Saida
Kenji Horino
Application Number:
JP2013064504A
Publication Date:
March 19, 2014
Filing Date:
March 26, 2013
Export Citation:
Assignee:
tdk Corporation
International Classes:
H01G4/33; H01G4/12
Domestic Patent References:
| JP2007294937A | ||||
| JP2001167970A | ||||
| JP2001291632A | ||||
| JP2002141241A |
Foreign References:
| WO2009029789A1 |