Title:
MANUFACTURING METHOD OF THIN FILM
Document Type and Number:
Japanese Patent JP2015183242
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing at a high film forming rate a transparent conductive oxide thin film having a visible light permeability and an electric conductivity enhanced by suppressing damage from charged particles in plasma as much as possible.SOLUTION: A substrate S and a sputtering target T to form a transparent conductive oxide thin film are arranged facing each other in a vacuum vessel. The following treatments are simultaneously practiced. (i) Plasma is formed between the substrate S and the sputtering target T. (ii) A bias electric field is formed between the substrate S and the sputtering target T to accelerate charged particles in the plasma toward the surface of the sputtering target T. (iii) A high-frequency electromagnetic field is formed in the vicinity of the surface of the sputtering target T using a high-frequency antenna 16 to enhance the plasma density in the vicinity of the surface of the sputtering target T.
Inventors:
NISHIKAWA MASAZUMI
MAEDA NAOKI
EBE AKINORI
MAEDA NAOKI
EBE AKINORI
Application Number:
JP2014061356A
Publication Date:
October 22, 2015
Filing Date:
March 25, 2014
Export Citation:
Assignee:
EMD KK
International Classes:
C23C14/34; C23C14/08
Attorney, Agent or Firm:
Kyoto International Patent Office