To provide a manufacturing method for a three-dimensional structure that can be formed only by a low-temperature process at 500°C or lower, thus has high affinity with a semi-conductor process, and allows cost reduction using a plastic substrate.

Silicon nitride film (ALD-SiN film 3) is formed on the substrate 1 by an atomic layer deposition method. Silicon nitride film (second HCD-SiN film 9) is formed by a heat CVD method using hexachlorodisilane above the ALD-SiN film 3, and a hole 11a is formed by patterning the silicon nitride film, thereby forming a sacrificial layer pattern. Titanium nitride film (third TiN film 13) is formed in a covering state of the sacrificial layer pattern made of the second HCD-SiN film 9, and the film is patterned, thereby forming an oscillating beam (structure pattern) 13a of which end is supported on the substrate surface across the sacrificial layer pattern. The ALD-SiN film 3 is used in a stopper, and the sacrificial layer pattern made of the second HCD-SiN film 9 is alternatively removed by etching from the clearance of the oscillating beam 13a, thereby forming a space (a) under the oscillating beam 13a.