Title:
MANUFACTURING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS553639
Kind Code:
A
Abstract:
PURPOSE:To obtain a dielectric-isolator separated substrate which is in parallel with a single-crystal plane and has less warning in the succeeding heat treatment, by grinding out a final polycrystal layer in parallel with the single-crystal plane, and then laminating an oxidized layer and a polycrystal film on the removed plane again. CONSTITUTION:An oxidized film 2 is formed on a single-crystal Si substrate 1 having grooves 1', then polycrystal layer 3 is formed. Oxidized films and polycrystal layers are alternately formed thereafter, and a laminated polycrystal substrate 5 is formed. In this case a final polycrystal layer 4 is laminated so that it is thicker than the dispersion d of the thickness between the oxidized film beneath the final layer and a sigle-crystal plane 6 and 1/40 of total thickness of polycrystal layer y. Then, the final polycrystal layer 4 is ground out along the A-A' plane in parallel with the single-crystal plane 6. An oxidized film 12 is formed on a polycrystal plane 7, and a polycrystal layer 13 is laminated in such a way it is smaller than 1/40 of total thickness of laminated layer y'. Since the thickness of the layer 13 is less than 1/40 of the total laminated layers, the unevenness of the thickness is negligible. A dielectric-insulator separated substrate is obtained by removing the B-B' portion of the substrate 11 with reference to the most external polycrystal plane 15.
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Inventors:
SHIMURA TATSUO
KARIYA TADAAKI
KARIYA TADAAKI
Application Number:
JP7533078A
Publication Date:
January 11, 1980
Filing Date:
June 23, 1978
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/762; H01L21/76; (IPC1-7): H01L21/76
Next Patent: JPS553640