To improve the dimensional accuracy of a transfer pattern by forming a thin Si pattern layer and to prevent the incidence of electron beams on a wafer by forming an electron beam scattering layer on the back surface of a mask to scatter electron beams transmitted through the mask.

A Si pattern layer 3 is joined with a SiO2 layer 2 on a Si layer 1, and a transfer pattern 5 is formed in the Si pattern layer 3. A polycrystalline Si is formed by sputtering on the back surface of an electron beam exposure mask 21 to form an electron beam scattering layer 11. Out of the electron beams 12 which irradiate the electron beam exposure mask 21, electron beams which pass through the openings of the transfer pattern 5 can propagate without any inhibition and reach a wafer where a circuit pattern is to be formed. On the other hand, the electron beams 12 which irradiate a thin Si pattern layer 3 passes through the layer without losing energy, however these beams are scattered by the electron beam scattering layer 11 and hardly propagate straight through the layer, thereby preventing the beams from reaching the wafer.