PURPOSE: To obtain a product of improved pattern preciseness in a good yield, by controlling angle of incidence of evaporated material, which is to be deposited on the substrate, between the evaporation source and the mask placed on the substrate.
CONSTITUTION: In depositing metal 3 in vacuum on a substrate 1 through a metal mask 2, evaporated material is made to fall upon the substrate 1 with its angle of incidence controlled. The angle of incidence is controlled by the incidence of the evaporated material through a cylinder 5 or a slit 6 placed between the mask 2 and evaporation source 3. The cylinder 5 or the slit 6 may be remolved together with the substrate 1, or allowed to stand still. This method effects deposition with excellent pattern preciseness even when plural substrates are subjected to simultaneous masking deposition while the substrates revolving.
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YASUDA TOMIROU
FUNIYUU MASAO
| JP38024220A | ||||
| JP39004785A | ||||
| JPS462002A | ||||
| JP49099843B | ||||
| JPS49118681A | 1974-11-13 |