To obtain an insulating film excellent in thermal characteristics, electric characteristics, low water absorption properties, especially a heat resistant insulating film having a remarkably small specific dielectric constant in semiconductor applications.

In a material for insulating films comprising a copolymer obtained by reacting a polyamide having a repeating unit of a specific structure with a reactive oligomer having substituents capable of reacting with carboxy groups, amino groups or hydroxy groups in the polyamide structure, the reactive oligomer is a compound having a norbornene structure.