Title:
MBE CRYSTAL GROWTH DEVICE AND METHOD
Document Type and Number:
Japanese Patent JPH08167575
Kind Code:
A
Abstract:
PURPOSE: To provide a MBE crystal growth device and a method which can restrain defects caused by impurities such as oxide and the like are effectively occurring on the surface of a substrate.
CONSTITUTION: A dissimilar gas introducing pipe 7 used for introducing reducing gas (H2) into a crucible 4 is provided, whereby heated hydrogen gas is introduced into the crucible 4. By this setup, impurities can be trapped in an oxide generating source.
Inventors:
HAYAFUJI AKIO
IZUMI MOICHI
KADOIWA KAORU
UNEME YUTAKA
IZUMI MOICHI
KADOIWA KAORU
UNEME YUTAKA
Application Number:
JP23834195A
Publication Date:
June 25, 1996
Filing Date:
September 18, 1995
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C30B25/14; C30B23/06; C30B29/40; C30B35/00; H01L21/203; (IPC1-7): H01L21/203; C30B25/14; C30B35/00
Attorney, Agent or Firm:
Kenichi Hayase
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