To provide a structure and a manufacturing method for preventing an uneven structure between memory cells, and entire performance reduction of the memory cells, due to overetching of a phase change layer in the memory cells during the formation of the memory cells.

The memory cell 106 includes a first electrode 120, a second electrode 122, a layer 124 of phase change material extending from a first contact 130 with the first electrode 120 to a second contact 132 with the second electrode 122, and a sidewall spacer 126 contacting the second electrode 122 and a sidewall of the layer 124 of phase change material adjacent to the second contact 132.

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