MEMORY DEVICE, MANUFACTURING METHOD THEREOF AND STORAGE APPARATUS

Title:

MEMORY DEVICE, MANUFACTURING METHOD THEREOF AND STORAGE APPARATUS

Document Type and Number:

Japanese Patent JP2007329273

Kind Code:

A

Abstract:

To provide a memory device having a structure which is easily and stably manufactured in a good condition.

The memory device 10 is configured in such a way that a memory layer 3 made of an oxide, and an ion source layer 4 containing any one selected from elements Cu, Ag and Zn are laminated and formed between a lower electrode 1 and an upper electrode 6, the memory layer 3 and the ion source layer 4 are electrically connected to the lower electrode 1 and the upper electrode 6 through a contact hole made of an opening formed on an insulating layer 2 of the lower electrode 1, the opening of the insulating layer 2 is formed to be wider in the lower electrode 1 side than in the upper electrode 6 side, and the memory layer 3 and the ion source layer 4 are formed continuously over the inside of the contact hole and the insulating layer 2.

Inventors:

ENDO KEITARO
SONE TAKESHI
OBA KAZUHIRO
NARISAWA KOSUKE

Application Number:

JP2006158867A

Publication Date:

December 20, 2007

Filing Date:

June 07, 2006

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L27/10

Domestic Patent References:

JP2005044848A	2005-02-17
JPH02194554A	1990-08-01
JP2006040946A	2006-02-09
JP2004342843A	2004-12-02

Attorney, Agent or Firm:

Yoshitsuno Kakuda
Hitoshi Ito

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