To provide a manufacturing method of a memory device which is easily and stably manufactured in a good condition.

In manufacturing the memory device, a memory cell is configured of a resistance change element having a recording layer between two electrodes, and having a reversibly changing resistant value of the recording layer. The method has processes of: forming a structure burying a metal layer 1 into a hole of a first insulating layer 21; forming a second insulating layer 22, so as to cover the metal layer 1 and the first insulating layer 21; forming a resist 32 with a substantially planar surface on the second insulating layer 22; executing etching, until the resist 32 is removed and the metal layer 1 is exposed to the surface; and then forming the resistant changing element on the metal layer 1.

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