MESFET INCLUDED SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Title:

MESFET INCLUDED SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH0621100

Kind Code:

A

Abstract:

PURPOSE: To provide MESFETs which are simple in structure and excellent in terms of the linearity of input/output characteristics with a high saturation output and a high noise factor.

CONSTITUTION: When annealing a drain layer 3, a source layer 4 and a channel layer 5, an SiN film, which contains a great deal of hydrogen, and, which is not so precise is formed on the surface of a GaAs-made board 2 and annealed in the atmosphere of N2. This construction reduces and eliminates the oxygen on the surface of the GaAs board 2 and opens an annealing film 6 only in the part where a drain electrode 13, a source electrode 14 and a gate electrode 15 are formed as well. It is, therefore, possible to reduce the surface level on the board surface and thin a surface depletion layer.

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Inventors:

NAKAGAWA YOSHIKAZU

Application Number:

JP17841792A

Publication Date:

January 28, 1994

Filing Date:

July 06, 1992

Export Citation:

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Assignee:

ROHM CO LTD

International Classes:

H01L21/324; H01L21/338; H01L29/812; (IPC1-7): H01L21/338; H01L21/324; H01L29/812

Attorney, Agent or Firm:

Furuya Eiko (2 outside)

Next Patent: MAGNETIC RECORDING/REPRODUCING METHOD AND ITS RECORDING DEVICE