To provide a metal polishing liquid capable of compatibly performing a high polishing speed and low dishing when polishing a polished object (wafer) with the metal polishing liquid used for chemical mechanical polishing (CMP) in a semiconductor device manufacturing process and a chemical mechanical polishing method using the same.

The metal polishing liquid for chemical mechanical polishing in the semiconductor device manufacture includes a compound 1 expressed by formula (1): herein R1 to R5 independently represent a hydrogen atom, a halogen atom, an aliphatic hydrocarbon group, an aryl group, a heterocyclic group, -COR6, -CO2R7, -CONR8R9, -CN, -OR10, -NR11R12, -SO3R13, or -SO2NR14R15, respectively. R6 to R15 independently represent a hydrogen atom, an aliphatic hydrocarbon group, an aryl group, a heterocyclic group, an acyl group, or an alkyl or arylsulfonyl group, respectively. R1 and R2, R2 and R3, R3 and R4, and R4 and R5 may be mutually coupled to form a cycle.