PURPOSE: To obtain a heat-resisting wiring in which a high melting point silicide is used by a method wherein silicon ions are implanted using the kinetic energy with which the damage caused by ion irradiation on the interface of a metal- silicon substrate becomes 80% or more of the maximum quantity of damage, and then an annealing process is conducted.

CONSTITUTION: A titanium thin film 2 is deposited on a silicon substrate using a sputtering method, an amorphous layer 5 is formed by implanting silicon ions, and a stochiometric metal silicide layer is formed on the silicon substrate using a lamp-annealing device. At that time, silicon ions 1 are implanted using the kinetic energy with which the ion irradiation damage on the interface of the metal-silicon substrate becomes 80% or more of the maximum quantity of damage, and then an annealing process is conducted thereon. As a result, a heat-resisting wiring, in which high melting point silicide is used, can be obtained.