To prepare a metallic compound solution having stability and concentration suitable for a solution CVD method, to obtain a raw material for CVD composed of the same solution and to provide a method for producing a thin film using the same raw material.

This solution is obtained by dissolving a metallic compound expressed by the following general formula (I) into a cyclohexane compound expressed by the following general formula (II): formula (I) {wherein, R1, R2 and R3 are a 1 to 8C alkyl group which may individually be substituted with a halogen atom and may contain oxygen atoms in the chains; R4 is a 2 to 18C alkylene group which may be branched; and M is a lead atom, a titanium atom or a zircoinum atom; in the case M is a lead atom, (1) is 0, (m) is 2, and (n) is 0, and, in the case M is a titanium atom or a zirconium atom, (n) is 0 or 1, and (1) and (m) are integers of 0 to 4, wherein 1+m+2n is 4}, and formula (11) {wherein, R5 is hydrogen atom or a 1 to 4C alkyl group; and (p) is the integers of 1 to 2}.