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Title:
METALLIC THIN FILM MATERIAL AND METHOD FOR DEPOSITING METALLIC THIN FILM
Document Type and Number:
Japanese Patent JP2013104099
Kind Code:
A
Abstract:

To provide a metallic thin film material in which the vapor pressure of the metallic thin film material is increased when depositing a metallic thin film, thereby increasing the feed rate of an organic metal per unit time and enabling efficient purging of a raw material adsorbed onto piping, and a method for depositing the metallic thin film.

The metallic thin film material includes an oxygen-free structure that contains a cyclic hydrocarbon and comprises only carbon, nitrogen, hydrogen and a metal element. The method for depositing the metallic thin film comprises delivering a vapor of the metallic thin film material to a substrate surface and feeding a nitrogen-containing reactive gas to the substrate surface simultaneously or sequentially with the vapor of the metallic thin film material.


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Inventors:
SHIMIZU HIDEJI
Application Number:
JP2011248719A
Publication Date:
May 30, 2013
Filing Date:
November 14, 2011
Export Citation:
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Assignee:
TAIYO NIPPON SANSO CORP
International Classes:
C23C16/18; H01L21/28; H01L21/285
Domestic Patent References:
JP2006511716A2006-04-06
JP2013508979A2013-03-07
Foreign References:
US20090291208A12009-11-26
US20110163062A12011-07-07
US20090208637A12009-08-20
Attorney, Agent or Firm:
Masatake Shiga
Suzuki Mitsuyoshi
Kazuya Nishi
Shunsuke Fushimi



 
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