METALLIC WIRING, AND SEMICONDUCTOR DEVICE USING IT, AND TFT LIQUID CRYSTAL DISPLAY

Title:

METALLIC WIRING, AND SEMICONDUCTOR DEVICE USING IT, AND TFT LIQUID CRYSTAL DISPLAY

Document Type and Number:

Japanese Patent JPH05152572

Kind Code:

A

Abstract:

PURPOSE: To lower the wiring resistance of a conductor layer by making it into multilayer structure of a conductor layer, consisting of pure aluminum, and a conductor layer, consisting of impurity-doped aluminum where high melting point metal is added as impurities.

CONSTITUTION: Metallic wiring is made in multilayer structure of a conductor layer 1 consisting of pure aluminum and a conductor layer 2 consisting of impurity-doped aluminum wherein high melting point metal of 1400°C in melting point is added as impurities. In this case, the high melting point metal is any of silicon, tantalum, titanium, molybdenum, tungsten, hafnium, niobium, zirconium, and vanadium. Hereby, the wiring resistance of the conductors 1 and 2 can be lowered more than the case that impurity-doped aluminum layer 1 is used.

Inventors:

NAKAMURA KAZUYOSHI
MATSUNAGA KOJI
KOBAYASHI IKUNORI
TAKEDA MAMORU
MATSUOKA TOMIZO

Application Number:

JP31769991A

Publication Date:

June 18, 1993

Filing Date:

December 02, 1991

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

G02F1/1343; G02F1/136; G02F1/1368; H01L21/3205; H01L23/52; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): G02F1/1343; G02F1/136; H01L21/3205; H01L27/12; H01L29/784

Attorney, Agent or Firm:

Akira Kobiji (2 outside)

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