Title:
METHO FOR EVALUATING SILICA GLASS CRUCIBLE, SILICA GLASS CRUCIBLE, APPARATUS FOR PULLING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2019119618
Kind Code:
A
Abstract:
To measure the glass structure of a silica glass crucible in a nondestructive manner to highly accurately determine the silica glass crucible capable of preventing dislocation from occurring when pulling a silicon single crystal.SOLUTION: The method for evaluating a silica glass crucible having a crystal layer provided on the inner surface side and having silica glass crystallized by a mineralizer and a non-crystal layer contacting the crystal layer after pulling a silicon single crystal comprises the steps of: acquiring a first Raman spectrum served as a Raman spectrum on the surface of the crystal layer; acquiring a second Raman spectrum served as a Raman spectrum on the side of the crystal layer on an interface between the crystal layer and the non-crystal layer; acquiring a third Raman spectrum served as a Raman spectrum on the side of the non-crystal layer on the interface between the crystal layer and the non-crystal layer; and determining the quality of the silica glass crucible on the basis of the first Raman spectrum, the second Raman spectrum and the third Raman spectrum.SELECTED DRAWING: Figure 9
Inventors:
SATO TADAHIRO
KITAHARA KEN
KITAHARA ERIKO
SUDO TOSHIAKI
KITAHARA KEN
KITAHARA ERIKO
SUDO TOSHIAKI
Application Number:
JP2017253106A
Publication Date:
July 22, 2019
Filing Date:
December 28, 2017
Export Citation:
Assignee:
SUMCO CORP
International Classes:
C30B29/06; C03B20/00; C30B15/10; G01N21/65
Attorney, Agent or Firm:
Ichiro Nomura
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