METHOD FOR ANALYZING SURFACE-LAYER IMPURITY OF POLYSILICON, AND SAMPLE-TREATING CONTAINER FOR ETCHING POLYSILICON

Japanese Patent JP3498003

B2

PROBLEM TO BE SOLVED: To prevent the contamination of a sample in analysis for making a high- sensitivity analysis performable by housing a polysilicon sample and an etching liquid in a sample treatment container, then moving the treatment container for bringing the etching liquid into contact with the surface of the polysilicon sample, and collecting the etching liquid.
SOLUTION: The sample treatment container 1 is provided with a container body 2 made of a fluororesin having an opening 2a of polysilicon sample inlet/outlet, a lid body 3 made of a fluororesin being provided at the opening 2a of the body 2 detachably and the body 2, and an etching liquid inlet/outlet 5 at the lid body 3. The container 1 is also provided with knurls 4 and 6 at the both end that can rotate the body 2 in one direction while being in contact with a rotary roller. In this configuration, the sample treatment container 1 accommodating the polysilicon sample and the etching liquid is mounted between a rotary-driving roller and a follower roller of a roller shaker for rotating via the knurls 4 and 6. After the etching is completed, the etching liquid is transferred to a washed evaporation condensation tool from the etching liquid inlet/outlet 5 of the lid body 3.

Masafumi Tanaka
Fumio Tokutake
Hitoshi Murota

JP7026499A

February 16, 2004

March 16, 1999

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Toshiba Ceramics Co., Ltd.
Tokuyama Corporation

G01N27/62; G01N1/10; G01N1/28; G01N31/00; G01N33/00; H01L21/306; H01L21/66; (IPC1-7): G01N1/28; G01N31/00; H01L21/306; H01L21/66

JP8233709A
JP8139145A
JP5288743A
JP1137911A
JP10332554A
JP10253511A
JP10242228A
JP6237743U
JP61206845U

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