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Title:
METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTANCE DEVICE
Document Type and Number:
Japanese Patent JP2009147351
Kind Code:
A
Abstract:

To provide a method for manufacturing a magnetoresistance device using the manufacturing apparatus of a magnetic multilayered film having a normal configuration suitable in particular for manufacturing a magnetic multilayered film by a semiconductor device maker, capable of enhancing a film capability and improving productivity in the production of a magnetic head or an MRAM comprising an TMR device.

The manufacturing method of the magnetoresistance device has a step of forming a multilayered metal film having an NiFe film and a PtMn film in a chamber 17B on a substrate, a step of forming a metallic oxide film in the chamber 18 different from the chamber 17B on the substrate after forming the multilayered metal film with the NiFe film and the PtMn film, and a step of forming the multilayered metal film with a CoFe film and the NiFe film in the chamber 17C different from the chambers 17B, 18 on the substrate after forming the metallic oxide film.


Inventors:
NOMURA HIDEJI
MIYOSHI AYUMI
TSUNEKAWA KOJI
Application Number:
JP2009005598A
Publication Date:
July 02, 2009
Filing Date:
January 14, 2009
Export Citation:
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Assignee:
CANON ANELVA CORP
International Classes:
H01L43/12; G11B5/39; H01F10/16; H01F10/32; H01F41/18; H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
JP2000076623A2000-03-14
JPH11298064A1999-10-29
JP2000058941A2000-02-25
JPH11316919A1999-11-16
JPH08239765A1996-09-17
JP2000096230A2000-04-04
JPH10183347A1998-07-14
Attorney, Agent or Firm:
Keisuke Watanabe
Yoshihiro Yamaguchi



 
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