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Title:
METHOD OF PRODUCING RESISTANCE VARIABLE MATERIAL CELL
Document Type and Number:
Japanese Patent JP2009147350
Kind Code:
A
Abstract:

To provide a method and apparatus for producing a resistance variable memory cell or resistance variable material with improved data retention characteristics and higher switching speeds.

In a memory cell 400, silver selenide 406 and a chalcogenide glass 404 such as germanium selenide (GeXSe(1-x)) are combined in an active layer to support the formation of conductive pathways in the presence of an electric potential applied between electrodes 402, 410. The memory cell can be fabricated advantageously with relatively wide ranges for the thickness of the silver selenide layer 406 and the glass layer 404.


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Inventors:
CAMPBELL KRISTY A
Application Number:
JP2008333739A
Publication Date:
July 02, 2009
Filing Date:
December 26, 2008
Export Citation:
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Assignee:
MICRON TECHNOLOGY INC
International Classes:
H01L27/105; H01C13/00; H01L45/00
Domestic Patent References:
JP2002536840A2002-10-29
JPH03238882A1991-10-24
Foreign References:
WO2000048196A12000-08-17
Attorney, Agent or Firm:
Kenji Sugimura
Kosaku Sugimura
Tatsuya Sawada
British tribute



 
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