To provide a method for manufacturing a semiconductor device, by which a semiconductor device having an electrode layer in which at least a layer located at a semiconductor layer side contains Mo can be divided into a plurality of unit cells with a good yield.
The method for manufacturing a semiconductor device includes a step of dividing a semiconductor device in which a semiconductor layer 13 is arranged between a first electrode layer 12 and a second electrode layer 14, and the first electrode layer 12 or the second electrode layer 13 is arranged on a substrate 11 side, and at least a layer located at the semiconductor layer 13 side, of the first electrode layer 12 contains Mo, into a plurality of unit cell 20. The method further includes: a step of scanning the first metal layer 12 with laser beam to scribe the first metal layer 12; and a step of scanning laser beam from the second metal layer 14 side or the semiconductor layer 13 side to simultaneously scribe the second metal layer 14 and the semiconductor layer 13. The scribing line of the first metal layer 12 and the scribing line of the second metal layer 14 and the semiconductor layer 13 are matched with each other.
Takeo Miyao
Nishida Hideyo
Next Patent: SUBSTRATE PROCESSING APPARATUS AND SELF DIAGNOSTIC METHOD THEREOF