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Title:
METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR INGOT
Document Type and Number:
Japanese Patent JP2006273665
Kind Code:
A
Abstract:

To provide a casting method and a casting apparatus which allow casting of a silicon ingot making effective use of the height of a casting mold, and solve the following problem; when raw material is additionally supplied to molten silicon melted in a casting mold, a mold release agent of the casting mold is peeled or damaged to lower yield due to crazing of an ingot and inclusion of the mold release agent.

The method for manufacturing a semiconductor ingot includes: melting semiconductor material in a casting mold by heating with a casting mold heating means; supplying and melting new semiconductor material; and solidifying the resulting semiconductor melt, wherein the new semiconductor material is supplied in a preheated state into the casting mold.


Inventors:
TSUCHIDA SHINKO
Application Number:
JP2005095850A
Publication Date:
October 12, 2006
Filing Date:
March 29, 2005
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
C01B33/02; B22D25/04
Domestic Patent References:
JP2002193609A2002-07-10
JP2001097707A2001-04-10