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Title:
SILICON MELTING CRUCIBLE, SILICON CASTING DEVICE USING THE SAME, AND METHOD FOR CASTING POLYCRYSTALLINE SILICON INGOT
Document Type and Number:
Japanese Patent JP2006273666
Kind Code:
A
Abstract:

To provide a silicon melting crucible for inexpensively manufacturing a high-quality silicon ingot and to provide a silicon casting device using the crucible and a method for casting a polycrystalline silicon ingot.

The silicon melting crucible 1 functions to heat and melt a silicon source material housed inside to prepare a silicon melt, and the silicon melting crucible 1 comprises a base body 2 made of a fused silica sintered body produced by compacting and sintering a powder source material essentially comprising fused silica powder, and a coating layer 3 made of a glass layer essentially comprising silicon dioxide laid on the base body 2 in at least a portion in contact with the silicon melt.


Inventors:
SAKAI YOHEI
Application Number:
JP2005095853A
Publication Date:
October 12, 2006
Filing Date:
March 29, 2005
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
C01B33/02; B22D25/04; C03B20/00