Title:
METHOD AND APPARATUS FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH05254981
Kind Code:
A
Abstract:
PURPOSE:To suppress the generation of lineage defects by specifically controlling the temp. distribution in the perpendicular direction of a melt part and setting the minimal value at the temp. distribution of the lower part at the time of producing the compd. semiconductor single crystal by a boat method. CONSTITUTION:A main heater 18 for forming a high-temp. region 12 is divided to a plurality in a crystal growth axis direction. The calorific value of the heater 18 of the part 14 nearest the solid-liquid boundary 15 of the crystal 16 is set smaller than the calorific value of the other main heater 18. An auxiliary heater 19 which is regulated independently from the main heater 18 is provided along the crystal growth axis direction in the upper part of the main heater 18 and the output thereof is regulated. The temp. gradient in the perpendicular direction where the temp. in the upper part is higher than the temp. in the lower part is set on the melt side from a raw material melt part 17 apart by 5 to 15cm from the solid-liquid boundary 15 within the boat to suppress the generation of melt convection. Further, the minimal value is set at the temp. distribution along the crystal growth axis direction in the lower part of at least the raw material melt part 17 to divide the melt convection to two.
Inventors:
Kazuyuki Ishihara
Makoto Sato
Koichi Murata
Kenji Oda
Saito Tsunehiro
Jiro Nishihama
Makoto Sato
Koichi Murata
Kenji Oda
Saito Tsunehiro
Jiro Nishihama
Application Number:
JP8998792A
Publication Date:
October 05, 1993
Filing Date:
March 13, 1992
Export Citation:
Assignee:
Asahi Glass Co., Ltd.
International Classes:
C30B11/00; C30B29/42; C30B29/48; H01L21/208; (IPC1-7): C30B11/00; C30B29/42
Attorney, Agent or Firm:
Kenji Izumina