METHOD FOR CLEANING OF SEMICONDUCTOR SUBSTRATE

Japanese Patent JP3239998

B2

PROBLEM TO BE SOLVED: To satisfactorily remove micro-damages caused by the working on a semiconductor substrate, and organic substances, metallic contaminants and micro-particles, that are sticking on the surface of a semiconductor substrate, with a small number of processes.
SOLUTION: This method comprises a process 11 of dipping a semiconductor substrate into a mixed solution or the like in which hydrogen peroxide and ammonium hydroxide are mixed, a process 12 of dipping the semiconductor substrate having dipped into the mixed solution into an oxidizing solution of at least one kind from among aqueous solution of dissolved ozone, nitric acid, and aqueous solution of hydrogen peroxide, a process 13 of dipping the semiconductor substrate having dipped into the oxidizing solution into a mixed solution of an organic acid or its salt and hydrofluoric acid, a process 14 of dipping the semiconductor substrate having dipped into the mixed solution into a solution containing an organic acid or its salt, or a mixed solution of an organic acid or its salt and hydrofluoric acid, and a process 15 of dipping the semiconductor substrate having dipped into the solution containing the organic acid or its salt, or the mixed solution of the organic acid or its salt and hydrofluoric acid into an oxidizing solution of at least one kind from among aqueous solution of dissolved ozone, nitric acid, and aqueous solution of hydrogen peroxide.

Kazunari Takaishi
Ryoko Takada

JP17392399A

December 17, 2001

June 21, 1999

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Mitsubishi Materials Silicon Corporation
Mitsubishi Materials Corporation

B08B3/08; C11D7/08; C11D7/26; C11D7/32; H01L21/304; (IPC1-7): H01L21/304

JP10209100A

Masayoshi Suda

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