Title:
METHOD FOR CORRECTING PROXIMITY EFFECT OF ELECTRON BEAM EXPOSURE, EXPOSURE METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MODULE FOR CORRECTING PROXIMITY
Document Type and Number:
Japanese Patent JP3725841
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method with high accuracy for correcting proximity effect of electron beam exposure.
SOLUTION: An underlying layer pattern 32 is classified. The pattern area density of a duplicated photolithographic layer pattern 33 with a photolithographic layer pattern 30 transferred to the upper layer of the underlying layer pattern 32 duplicated with the underlying layer pattern 32 and that of a pattern 31 without duplication are calculated each in a unit area, and then the correction for the proximity effect of the electron beam exposure is performed.
Inventors:
Toshiyuki Magoshi
Shinji Sato
Shinji Sato
Application Number:
JP2002188684A
Publication Date:
December 14, 2005
Filing Date:
June 27, 2002
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G03F7/20; G03F7/00; G03F9/00; H01J37/302; H01J37/304; H01J37/317; H01L21/027; (IPC1-7): H01L21/027; G03F7/20
Domestic Patent References:
| JP7078737A | ||||
| JP7094378A | ||||
| JP10275762A | ||||
| JP7094379A |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Kawamata Sumio
Nakamura Tomoyuki
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Iwa Saki Kokuni
Kawamata Sumio
Nakamura Tomoyuki
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu