METHOD FOR DEPOSITING CHEMICAL VAPOR-DEPOSITED FILM BY PLASMA CVD METHOD

Title:

METHOD FOR DEPOSITING CHEMICAL VAPOR-DEPOSITED FILM BY PLASMA CVD METHOD

Document Type and Number:

Japanese Patent JP2004300479

Kind Code:

A

Abstract:

To provide a method for depositing a chemical vapor-deposited film of excellent adhesiveness, softness and flexibility on a surface of a base material such as plastic by a plasma CVD method.

In the method for depositing a vapor-deposited film formed of silicon oxide on a surface of a base material by holding the base material to be treated in a plasma treatment chamber, and feeding organic silicon compound and oxidizing gas in the treatment chamber to perform a chemical plasma treatment, the feed quantity of organic silicon compound gas in the plasma treatment chamber is set to be constant, and the feed quantity of oxidizing gas is changed while depositing the vapor-deposited film.

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Inventors:

KOBAYASHI AKIRA
NAMIKI TSUNEHISA
HOSONO HIROKO
KURASHIMA HIDEO

Application Number:

JP2003092265A

Publication Date:

October 28, 2004

Filing Date:

March 28, 2003

Export Citation:

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Assignee:

TOYO SEIKAN KAISHA LTD

International Classes:

B65D23/02; B05D3/10; C08J7/04; C23C16/42; (IPC1-7): C23C16/42; B05D3/10; B65D23/02; C08J7/04

Attorney, Agent or Firm:

Naozumi Ono
Sachiko Okunuki

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